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Imec Demonstrates 50GHz Ge Waveguide Electro-Absorption Modulator

Achievement enables next-generation optical interconnects

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By: DAVID SAVASTANO

Contributing Editor, Coatings World and Ink World, Coatings World and Ink World Magazine

At OFC 2015, the largest global conference and exposition for optical communications, imec, its associated lab at Ghent University (Intec), and Stanford University demonstrated a compact germanium (Ge) waveguide electro-absorption modulator (EAM) with a modulation bandwidth beyond 50GHz.
 
Combining state-of-the-art extinction ratio and low insertion loss with an ultra-low capacitance of just 10fF, the demonstrated EAM marks an important milestone for the realization of next-generation silicon integrated optical interconnects at 50Gb/s and beyond.
 
“This achievement is a milestone for realizing silicon optical transceivers for datacom applications at 50Gb/s and beyond,” said Joris Van Campenhout, program director at imec. “We have developed a modulator that addresses the bandwidth and density requirements for future chip-level optical interconnects.”

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